学术探索
学术期刊
新闻热点
数据分析
智能评审

DEPENDENCE OF MOS TRANSISTOR THRESHOLD VOLTAGE ON SUBSTRATE RESISTIVITY

被引：10
作者：
BROTHERTON, SD
机构：
来源：
SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 06期
关键词：
D O I：
10.1016/0038-1101(67)90142-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：611 / +
页数：1
相关论文
共 8 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[3]  
HILBOURNE RA, 1965, ELECTRON ENGNG, V37, P165
[4]  
KOOI E, 1965, PHILIPS RES REP, V20, P578
[5]   FIELD EFFECT STUDIES OF OXIDIZED SILICON SURFACE [J].
LINDMAYER, J .
SOLID-STATE ELECTRONICS, 1966, 9 (03) :225-+
[6]   EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].
SAH, CT ;
PAO, HC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) :393-+
[7]   CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].
SAH, CT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :324-+
[8]  
WHELAN MV, 1965, PHILIPS RES REP, V20, P562
1