NON-OHMIC BEHAVIOUR IN AMORPHOUS GERMANIUM AT HIGH ELECTRIC FIELDS

被引：21

作者：

CROITORU, N

VESCAN, L

机构：

[1] Institute of Physics of the Academy, Bucharest

来源：

THIN SOLID FILMS | 1969年 / 3卷 / 04期

关键词：

D O I：

10.1016/0040-6090(69)90121-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current-transport mechanism in amorphous germanium films was studied in function of voltage, temperature and electrode separation. At electric fields greater than 104 V cm-1 the current increased exponentially with the square root of the voltage. In addition a decrease of the activation energy of the current with increasing voltage was observed. For a wide voltage range an empirical formula for the current was found. It was concluded that the conduction is bulk-limited. © 1969.

引用

页码：269 / &

共 20 条

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