OPTICAL-PROPERTIES OF STRAINED LAYER (111)B AL0.15GA0.85AS-IN0.04GA0.96AS QUANTUM-WELL HETEROSTRUCTURES

被引：23

作者：

MOISE, TS

GUIDO, LJ

BEGGY, JC

CUNNINGHAM, TJ

SESHADRI, S

BARKER, RC

机构：

[1] Center for Microelectronics Materials and Structures, Yale University, New Haven, 06520, CT, Yale Station

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 01期

关键词：

ALGAAS INGAAS; OPTICAL PROPERTIES; QUANTUM WELLS;

D O I：

10.1007/BF02670931

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data presented here demonstrate that strained-layer (111)B Al0.15Ga0.85As-In0.04Ga0.96As quantum wells exhibit unique optical properties when compared to otherwise identical (100) oriented strained layers. Photoluminescence measurements identify a strain-induced electric field of order 6.7 V-mu-m-1 within the (111)B quantum well that is not present for the (100) case. Photoluminescence excitation spectroscopy measurements show that the heavy-hole to light-hole energy band splitting is approximately 7 meV larger for the (111)B structure than for the (100) structure.

引用

页码：119 / 124

页数：6

共 14 条

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[2]

CADY WG, 1946, PIEZOELECTRICITY

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