RESONANT RAMAN-SCATTERING AND SPECTRAL ELLIPSOMETRY ON INAS GASB SUPERLATTICES WITH DIFFERENT INTERFACES

被引:26
作者
BEHR, D [1 ]
WAGNER, J [1 ]
SCHMITZ, J [1 ]
HERRES, N [1 ]
RALSTON, JD [1 ]
KOIDL, P [1 ]
RAMSTEINER, M [1 ]
SCHROTTKE, L [1 ]
JUNGK, G [1 ]
机构
[1] PAUL DRUDE INST FESTKORPERELEKTRON,D-10117 BERLIN,GERMANY
关键词
D O I
10.1063/1.112480
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have used Raman spectroscopy and spectral ellipsometry to investigate InAs/GaSb short-period superlattices (SLs), grown by molecular-beam epitaxy, with either InSb- or GaAs-like interfaces. Room-temperature ellipsometric measurements show spectral features in the dielectric function due to the E 1 and E1+Δ1 interband transitions of GaSb and InAs. For SLs with small InAs layer thicknesses (4 ML InAs/10 ML GaSb) the critical point energies are found to depend on the type of interfacial bonding, with an energy shift of up to 50 meV observed between SLs with GaAs- and InSb-like interfaces. Resonant Raman measurements show a pronounced enhancement in scattering efficiency for the superlattice phonons and, in particular, for the interface modes for incident photon energies matching the critical point energies of the SL. © 1994 American Institute of Physics.
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页码:2972 / 2974
页数:3
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