RESONANT RAMAN-SCATTERING AND SPECTRAL ELLIPSOMETRY ON INAS GASB SUPERLATTICES WITH DIFFERENT INTERFACES

被引：26

作者：

BEHR, D ^{[1
]}

WAGNER, J ^{[1
]}

SCHMITZ, J ^{[1
]}

HERRES, N ^{[1
]}

RALSTON, JD ^{[1
]}

KOIDL, P ^{[1
]}

RAMSTEINER, M ^{[1
]}

SCHROTTKE, L ^{[1
]}

JUNGK, G ^{[1
]}

机构：

[1] PAUL DRUDE INST FESTKORPERELEKTRON,D-10117 BERLIN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 23期

关键词：

D O I：

10.1063/1.112480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used Raman spectroscopy and spectral ellipsometry to investigate InAs/GaSb short-period superlattices (SLs), grown by molecular-beam epitaxy, with either InSb- or GaAs-like interfaces. Room-temperature ellipsometric measurements show spectral features in the dielectric function due to the E 1 and E1+Δ1 interband transitions of GaSb and InAs. For SLs with small InAs layer thicknesses (4 ML InAs/10 ML GaSb) the critical point energies are found to depend on the type of interfacial bonding, with an energy shift of up to 50 meV observed between SLs with GaAs- and InSb-like interfaces. Resonant Raman measurements show a pronounced enhancement in scattering efficiency for the superlattice phonons and, in particular, for the interface modes for incident photon energies matching the critical point energies of the SL. © 1994 American Institute of Physics.

引用

页码：2972 / 2974

页数：3

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