IS THERE AN ELASTIC ANOMALY FOR A (001) MONOLAYER OF INAS EMBEDDED IN GAAS

被引:53
作者
BERNARD, JE [1 ]
ZUNGER, A [1 ]
机构
[1] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401
关键词
D O I
10.1063/1.112660
中图分类号
O59 [应用物理学];
学科分类号
摘要
When a coherently grown (001)-oriented layer of InAs is embedded in a GaAs host, the coherency strain induces a perpendicular distortion of the embedded layer, predicted by continuum elasticity theory to be epsilon(perpendicular-to) = 7.3 %. Brandt, Ploog, Bierwolf, and Hohenstein, [Phys. Rev. Lett. 68, 1339 (1992)] have described a high-resolution electron microscopic analysis of such buried layers that appears to reveal a breakdown of continuum elasticity theory in the limit of monolayer films. In particular, they found for a single monolayer of InAs a lattice distortion that corresponds to epsilon(perpendicular-to) = 12.5%. Here we report on an investigation into whether a first-principles local-density total energy minimization shows such an elastic anomaly in the monolayer limit. We find that it does not.
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页码:165 / 167
页数:3
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