EPITAXIAL EFFECTS ON COHERENT PHASE-DIAGRAMS OF ALLOYS

[1] ALLOVON M, UNPUB

[2] GROWTH AND CHARACTERIZATION OF GAASSB-GAALASSB LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : 416 - 418

[3] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (001), (111)A, AND (111)B GAAS SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) : 67 - 74

[4] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6849 - 6851

[5] BELLON J, UNPUB

[6] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 567 - 569

[7] BENEKING H, 1975, I PHYS C SER, V24, P113

[8] ORDERING OF ISOVALENT INTERSEMICONDUCTOR ALLOYS [J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6338 - 6341

[9] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535

[10] STRUCTURAL TRANSITIONS IN EPITAXIAL OVERLAYERS [J]. JOURNAL DE PHYSIQUE, 1986, 47 (12): : 2055 - 2073

[1] ALLOVON M, UNPUB

[2] GROWTH AND CHARACTERIZATION OF GAASSB-GAALASSB LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : 416 - 418

[3] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (001), (111)A, AND (111)B GAAS SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) : 67 - 74

[4] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6849 - 6851

[5] BELLON J, UNPUB

[6] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 567 - 569

[7] BENEKING H, 1975, I PHYS C SER, V24, P113

[8] ORDERING OF ISOVALENT INTERSEMICONDUCTOR ALLOYS [J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6338 - 6341

[9] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535

[10] STRUCTURAL TRANSITIONS IN EPITAXIAL OVERLAYERS [J]. JOURNAL DE PHYSIQUE, 1986, 47 (12): : 2055 - 2073