ELECTRICAL-PROPERTIES OF PB1-XCDXS EPITAXIAL-FILMS

被引：12

作者：

JENSEN, JD

SCHOOLAR, RB

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1978年 / 7卷 / 02期

关键词：

D O I：

10.1007/BF02655676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：237 / 252

页数：16

共 8 条

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[3] THIN-FILM (PB,SN)SE PHOTODIODES FOR 8-12-MU-M OPERATION [J].

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[4] SURFACE-CHARGE TRANSPORT IN PBSXSE1-X AND PB1-YSNYSE EPITAXIAL-FILMS [J].

JENSEN, JD ;

SCHOOLAR, RB .

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[5] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].

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[6] COMPOSITION-TUNED PBSXSE1-X SCHOTTKY-BARRIER IR DETECTORS [J].

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JENSEN, JD ;

BLACK, GM .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :620-622

[7] NARROWBAND DETECTION AT LONG WAVELENGTHS WITH EPITAXIAL PBYSN1-YSE FILMS [J].

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JENSEN, JD .

APPLIED PHYSICS LETTERS, 1977, 31 (08) :536-538

[8]

SOOD AK, 1975, MAY EL SOC M TOR

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