THIN-FILM (PB,SN)SE PHOTODIODES FOR 8-12-MU-M OPERATION

被引：17

作者：

HOHNKE, DK ^{[1
]}

HOLLOWAY, H ^{[1
]}

YEUNG, KF ^{[1
]}

HURLEY, M ^{[1
]}

机构：

[1] FORD MOTOR CO,RES STAFF,DEARBORN,MI 48121

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 02期

关键词：

D O I：

10.1063/1.88983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：98 / 100

页数：3

共 10 条

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MELNGAIL.I ;

STRAUSS, AJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (26) :1193-&

[2] PHOTODIODES FABRICATED IN EPITAXIAL PBTE BY SB+ ION-IMPLANTATION [J].

DONNELLY, JP ;

HOLLOWAY, H .

APPLIED PHYSICS LETTERS, 1973, 23 (12) :682-683

[3] EPITAXIAL PBSE AND PB1-CHI SN CHI SE - GROWTH AND ELECTRICAL PROPERTIES [J].

HOHNKE, DK ;

KAISER, SW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :892-897

[4] EPITAXIAL PBSE SCHOTTKY-BARRIER DIODES FOR INFRARED DETECTION [J].

HOHNKE, DK ;

HOLLOWAY, H .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :633-635

[5] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

WILKES, E .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[6] INJECTION LUMINESCENCE AND LASER ACTION IN EPITAXIAL PBTE DIODES [J].

HOLLOWAY, H ;

YEUNG, KF ;

VARGA, AJ ;

WEBER, WH ;

LOGOTHETIS, EM .

APPLIED PHYSICS LETTERS, 1972, 21 (01) :5-+

[7] INFRARED DETECTION BY SCHOTTKY BARRIERS IN EPITAXIAL PBTE [J].

LOGOTHETIS, EM ;

HOLLOWAY, H ;

VARGA, AJ ;

WILKES, E .

APPLIED PHYSICS LETTERS, 1971, 19 (09) :318-+

[8] N-P JUNCTION IR DETECTORS MADE BY PROTON BOMBARDMENT OF EPITAXIAL PBTE [J].

LOGOTHETIS, EM ;

VARGA, AJ ;

JOHNSON, WJ ;

HOLLOWAY, H .

APPLIED PHYSICS LETTERS, 1972, 21 (09) :411-+

[9]

Melngailis I., 1970, SEMICOND SEMIMETALS, V5, P111, DOI [10.1016/S0080-8784(08)62815-X, DOI 10.1016/S0080-8784(08)62815-X]

[10] HIGH DETECTIVITY PBXSN1-XTE PHOTOVOLTAIC DIODES [J].

ROLLS, WH ;

EDDOLLS, DV .

INFRARED PHYSICS, 1973, 13 (02) :143-147

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