PHOTODIODES FABRICATED IN EPITAXIAL PBTE BY SB+ ION-IMPLANTATION

被引：18

作者：

DONNELLY, JP

HOLLOWAY, H

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[2] FORD MOTOR CO,SCI RES STAFF,DEARBORN,MI 48120

来源：

关键词：

D O I：

10.1063/1.1654789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：682 / 683

页数：2

共 7 条

[1] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
BURSTEIN, E
[J]. PHYSICAL REVIEW, 1954, 93 (03): : 632 - 633
[2] Donnelly J. P., 1973, Journal of Nonmetals, V1, P123
[3] P-N-JUNCTION PHOTODIODES IN PBTE PREPARED BY SB+ ION IMPLANTATION
DONNELLY, JP
LINDLEY, WT
FOYT, AG
HARMAN, TC
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (08) : 279 - &
[4] DONNELLY JP, 1972, P C PHYSICS IV VI CO
[5] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE
HOLLOWAY, H
LOGOTHETIS, EM
WILKES, E
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) : 3543 - +
[6] HOLLOWAY H, UNPUBLISHED
[7] INFRARED DETECTION BY SCHOTTKY BARRIERS IN EPITAXIAL PBTE
LOGOTHETIS, EM
HOLLOWAY, H
VARGA, AJ
WILKES, E
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (09) : 318 - +