IS THE HALL-EFFECT IN SILICON INVERSION LAYERS CONSISTENT WITH MACROSCOPIC INHOMOGENEITIES

被引：9

作者：

THOMPSON, JP

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 38卷 / 05期

关键词：

D O I：

10.1080/13642817808246401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：527 / 533

页数：7

共 7 条

[1] THRESHOLD CONDUCTION IN INVERSION LAYERS
ADKINS, CJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (05): : 851 - 883
[2] HALL-EFFECT IN INVERSION LAYERS
ADKINS, CJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (05): : 535 - 548
[3] DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS
ARNOLD, E
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 705 - 707
[4] CONDUCTION MECHANISMS IN BANDTAILS AT SI-SIO2 INTERFACE
ARNOLD, E
[J]. SURFACE SCIENCE, 1976, 58 (01) : 60 - 70
[5] CONDUCTIVITY AND MOBILITY EDGES FOR 2-DIMENSIONAL DISORDERED SYSTEMS
LICCIARDELLO, DC
THOULESS, DJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (24): : 4157 - 4170
[6] ANDERSON TRANSITION
MOTT, N
PEPPER, M
POLLITT, S
WALLIS, RH
ADKINS, CJ
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1975, 345 (1641) : 169 - 205
[7] HALL-EFFECT MEASUREMENTS ON SILICON INVERSION LAYERS
THOMPSON, JP
[J]. PHYSICS LETTERS A, 1978, 66 (01) : 65 - 66