EFFECT OF NONUNIFORMLY DOPED SURFACE-LAYER ON THE BARRIER HEIGHT OF A SCHOTTKY CONTACT

被引：16

作者：

ROY, SB

DAW, AN

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 09期

关键词：

D O I：

10.1016/0038-1101(80)90060-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：949 / 952

页数：4

共 10 条

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[6]

LINDMAYER J, 1965, FUNDAMENTALS SEMICON

[7] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].

SHANNON, JM .

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[8] INCREASING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION [J].

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APPLIED PHYSICS LETTERS, 1974, 25 (01) :75-77

[9] METAL P-N SCHOTTKY-BARRIER DIODES [J].

VANDERZIEL, A .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :269-272

[10] CHARACTERISTICS OF ALUMINUM-SILICON SCHOTTKY BARRIER DIODE [J].

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