HIGH-EFFICIENCY SUBMICRON LIGHT-EMITTING RESONANT-TUNNELING DIODES

被引：9

作者：

BUHMANN, H

MANSOURI, L

WANG, J

BETON, PH

EAVES, L

HENINI, M

机构：

[1] Department of Physics, University of Nottingham

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 26期

关键词：

D O I：

10.1063/1.112383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated GaAs/AlAs p-i-n double-barrier resonant tunneling diodes with lateral dimensions down to 0.5 μm. There are significant differences in the electroluminescence spectra of these diodes as compared with large area diodes fabricated from the same heterostructure. In particular, a red shift of the quantum well emission line is observed together with an additional spectral line which is attributed to spatially indirect recombination. Furthermore, there is a strong increase in the low-temperature electroluminescence efficiency for the smallest devices. © 1994 American Institute of Physics.

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页码：3332 / 3334

页数：3

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