MICROFABRICATION AND OPTICAL STUDY OF REACTIVE ION ETCHED INGAASP/INP AND GAAS/GAALAS QUANTUM WIRES

被引：51

作者：

IZRAEL, A

SERMAGE, B

MARZIN, JY

OUGAZZADEN, A

AZOULAY, R

ETRILLARD, J

THIERRYMIEG, V

HENRY, L

机构：

[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE

[2] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 09期

关键词：

D O I：

10.1063/1.102676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microfabrication of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wire structures with dimensions down to 30 nm has been achieved. From time-resolved photoluminescence, the importance of surface recombination effects is outlined in both systems. It is shown that the use of epitaxial overgrowth leads to a significant increase of the carrier lifetime in GaAs/GaAlAs wires, so that emission of very narrow wires (width<40 nm) can be detected. The possible assignment of the observed shifts of the cw photoluminescence peak energies to additional lateral confinement effects is discussed.

引用

页码：830 / 832

页数：3

共 17 条

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