LIGHT-INDUCED-CHANGES IN THE DOS OF CHALCOGENIDE GLASSES STUDIED BY XEROGRAPHIC TECHNIQUES

被引:5
作者
ABKOWITZ, MA
机构
[1] Xerox Corporation, Webster, NY 14580
关键词
D O I
10.1016/S0022-3093(05)80533-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The extraordinary sensitivity of xerographic potentials to light- and thermally induced fluctuations in trapped space charge, the very feature which contributes to problematic instabilities, has in recent years itself been exploited to provide a means of energetically mapping the traps and thermal emission centers involved in these processes. Three major features have emerged from these studies. (1) Cyclic instabilities are not merely the result of transient fluctuations in the occupancy of a static population of specific deep states. Rather they are associated with systematic and reversible changes in the DOS itself. (2) The near midgap states involved in light and thermally induced metastabilities are energetically coincident. (3) There is strong evidence from doping studies that the states which control light and thermally induced memory effects are in fact valence alternation pair-like native defects.
引用
收藏
页码:188 / 199
页数:12
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