ANALYTICAL MODELING OF THRESHOLD VOLTAGES IN P-CHANNEL SI/SIGE/SI MOS STRUCTURES

被引：37

作者：

INIEWSKI, K

VOINIGESCU, S

ATCHA, J

SALAMA, CAT

机构：

[1] Department of Electrical Engineering, Toronto

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 05期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/0038-1101(93)90249-P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model for the threshold voltages in a Si/SiGe/Si MOS structure is presented. It offers very good accuracy as compared to results of one- and two-dimensional numerical simulations. It is shown that short-channel effects lower the threshold voltage of the SiGe channel and increase the threshold voltage for parasitic conduction in the Si-cap layer. The model can serve as a useful tool for p-channel Si/SiGe/Si MOSFET design.

引用

页码：775 / 783

页数：9