ENHANCEMENT OF RESOLUTION AND LINEARITY-CONTROL OF CONTACT-HOLE RESIST PATTERNS WITH SURFACE-ACTIVE DEVELOPER

被引：3

作者：

SHIMADA, H

SHIMOMURA, S

AU, R

MIYAWAKI, M

OHMI, T

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,MICROELECTR LAB,SENDAI,MIYAGI 980,JAPAN

[2] CANON INC,HIRATSUKA,KANAGAWA 254,JAPAN

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1994年 / 7卷 / 03期

关键词：

D O I：

10.1109/66.311343

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The resolution enhancement of contact-hole resist patterns featuring precise linear correlation between mask size and resist-pattern size by employing a surface-active developer is presented. The addition of surfactant improves the wettability of the developer, thus enabling the solution to penetrate narrow spaces. The optimum surfactant concentration in developer leads to superior resist performance. This technology for contact-hole patterning results in high resolution, high sensitivity, and a wide process margin for ULSI manufacturing.

引用

页码：389 / 393

页数：5

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