CONTENT-ADDRESSABLE MEMORY CELL WITH MNOS TRANSISTORS

被引：3

作者：

CARLSTEDT, G ^{[1
]}

PETERSSON, GP ^{[1
]}

JEPPSON, KO ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL, RES LAB ELECT, GOTHENBURG, SWEDEN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1973年 / SC 8卷 / 05期

关键词：

D O I：

10.1109/JSSC.1973.1050414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：338 / 343

页数：6

共 10 条

[1]

AHRONS RW, 1963, RCA REV, V24, P325

[2] MNOS MEMORY TRANSISTORS IN SIMPLE MEMORY ARRAYS [J].

CARLSTEDT, LG ;

SVENSSON, CM .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) :382-+

[3] METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS [J].

FROHMANB.D .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1207-+

[4]

HERLEIN RF, 1969, ISSCC DIG TECH PAPER, P42

[5]

IGARASHI R, 1967, AFIPS C P, V30, P499

[6] INTEGRATED-CIRCUIT CONTENT-ADDRESSABLE MEMORIES [J].

KOO, JT .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1970, SC 5 (05) :208-+

[7]

LUNDKVIST L, TO BE PUBLISHED

[8] PROPERTIES OF MNOS STRUCTURES [J].

LUNDSTRO.KI ;

SVENSSON, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :826-&

[9] A MAGNETIC ASSOCIATIVE MEMORY SYSTEM [J].

MCDERMID, WL ;

PETERSEN, HE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1961, 5 (01) :59-62

[10] LOW-COST ASSOCIATIVE MEMORY [J].

MUNDY, JL ;

BURGESS, JF ;

NEUGEBAUER, C ;

JOYNSON, RE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) :364-+

← 1 →