ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION KINETICS IN ION-IMPLANTED GAAS

被引：24

作者：

JOHNSON, ST ^{[1
]}

WILLIAMS, JS ^{[1
]}

NYGREN, E ^{[1
]}

ELLIMAN, RG ^{[1
]}

机构：

[1] CSIRO, CLAYTON, VIC 3168, AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6567 / 6569

页数：3

共 12 条

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[2]

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[3]

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[4] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS [J].

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[5] DIRECT MEASUREMENT OF SOLID-PHASE EPITAXIAL-GROWTH KINETICS IN GAAS BY TIME-RESOLVED REFLECTIVITY [J].

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[6] PROPORTIONALITY BETWEEN ION-BEAM-INDUCED EPITAXIAL REGROWTH IN SILICON AND NUCLEAR-ENERGY DEPOSITION [J].

LINNROS, J ;

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PHYSICAL REVIEW B, 1985, 32 (05) :2770-2777

[7]

OLSON GL, 1985, MATER RES SOC S P, V35, P25

[8] DECHANNELING ANALYSIS OF DISORDER IN (100) GALLIUM-ARSENIDE [J].

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :639-642

[9]

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[10]

Williams J. S., 1985, MATER RES SOC S P, V37, P127

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