STRUCTURAL AND CHEMICAL-PROPERTIES OF INAS LAYERS GROWN ON INP(100) SURFACES BY ARSENIC STABILIZATION

被引：98

作者：

HOLLINGER, G

GALLET, D

GENDRY, M

SANTINELLI, C

VIKTOROVITCH, P

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：832 / 837

页数：6

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