REDUCED PRESSURE MOCVD OF C-AXIS ORIENTED BISRCACUO THIN-FILMS

被引：15

作者：

HAMAGUCHI, N

VIGIL, J

GARDINER, R

KIRLIN, PS

机构：

[1] Advanced Technology Materials Inc., New Milford, CT

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 04期

关键词：

BiSrCaCuO; Metal; β-diketonate; MOCVD; Stagnation point flow; Triphenylbismuth;

D O I：

10.1143/JJAP.29.L596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BiSrCaCuO thin films were deposited on MgO(100) single crystal substrates by metalorganic chemical vapor deposition at 500°C and 2 Torr using fluorinated β-diketonate complexes of Sr, Ca and Cu and triphenylbismuth. An inverted vertical reaction chamber allowed uniform film growth over large areas (7.7 cm diameter). The as-deposited films were amorphous mixtures of oxides and fluorides and a two step anealing protocol (750°C+850-870°C) was developed which gives c-axis oriented films of Bi2Sr2Ca1Cu2Ox. The post-annealed films showed onsets in the resistive transition of 110 K and zero resistivity was achieved by 83 K. Critical current densities as high as 1.1×104A/cm2were obtained at 25 K. © 1990 IOP Publishing Ltd.

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页码：L596 / L599

页数：4

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