SAMPLE CURRENT MAXIMUM AT THE CRITICAL ANGLE OF X-RAY TOTAL-REFLECTION

被引：19

作者：

KAWAI, J

HAYAKAWA, S

SUZUKI, S

KITAJIMA, Y

TAKATA, Y

URAI, T

MEAEDA, K

FUJINAMI, M

HASHIGUCHI, Y

GOHSHI, Y

机构：

[1] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

[2] UNIV TOKYO,DEPT IND CHEM,BUNKYO KU,TOKYO 113,JAPAN

[3] NIPPON STEEL CORP LTD,ADV MAT & TECHNOL RES LABS,NAKAHARA K11,KAWASAKI 221,JAPAN

[4] NATL LAB HIGH ENERGY PHYS,PHOTON FACTORY,OHO,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.110363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The x-ray photoemitted electron intensity and sample current of a GaAs wafer are measured at 2 and 3 keV excitation photon energies while varying the glancing angle of the incident x rays. It is found that the sample current and the x-ray photoemitted electron intensity have similar behavior with respect to the glancing angle. The sample current as well as the photoemission intensity have a maximum at the critical angle of the x-ray total reflection. This is the first report of the observation of the existence of a sample current maximum at the critical angle of x-ray total reflection.

引用

页码：269 / 271

页数：3

共 11 条

[1] PROBING DEPTH OF SOFT-X-RAY ABSORPTION-SPECTROSCOPY MEASURED IN TOTAL-ELECTRON-YIELD MODE [J].