ANGULAR-DEPENDENT X-RAY PHOTOEMISSION STUDY OF OXIDIZED SILICON AT LOW X-RAY INCIDENCE ANGLES

被引：22

作者：

MEHTA, M ^{[1
]}

FADLEY, CS ^{[1
]}

机构：

[1] UNIV HAWAII,DEPT CHEM,HONOLULU,HI 96822

来源：

CHEMICAL PHYSICS LETTERS | 1977年 / 46卷 / 02期

关键词：

D O I：

10.1016/0009-2614(77)85248-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：225 / 230

页数：6

共 11 条

[1] DIRECT OBSERVATION OF SURFACE-PROFILE EFFECTS ON X-RAY-PHOTOELECTRON ANGULAR-DISTRIBUTIONS [J].

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MEHTA, M .

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[2]

Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3

[3] SURFACE ANALYSIS AND ANGULAR-DISTRIBUTIONS IN X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

FADLEY, CS ;

BAIRD, RJ ;

SIEKHAUS, W ;

NOVAKOV, T ;

BERGSTROM, SA .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 4 (02) :93-137

[4] INSTRUMENTATION FOR SURFACE STUDIES - XPS ANGULAR-DISTRIBUTIONS [J].

FADLEY, CS .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :725-754

[5] ULTRASOFT-X-RAY REFLECTION, REFRACTION, AND PRODUCTION OF PHOTOELECTRONS (100-1000-EV REGION) [J].

HENKE, BL .

PHYSICAL REVIEW A, 1972, 6 (01) :94-&

[6]

HENKE BL, 1974, 722174 AIR FORC OFF

[7] PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

HILL, JM ;

ROYCE, DG ;

FADLEY, CS ;

WAGNER, LF ;

GRUNTHANER, FJ .

CHEMICAL PHYSICS LETTERS, 1976, 44 (02) :225-231

[8]

HILL JM, 1975, THESIS U HAWAII

[9] ENHANCEMENT OF SURFACE-ATOM INTENSITIES IN X-RAY PHOTOELECTRON-SPECTRA AT LOW X-RAY INCIDENCE ANGLES [J].

MEHTA, M ;

FADLEY, CS .

PHYSICS LETTERS A, 1975, 55 (01) :59-61

[10]

MEHTA M, UNPUBLISHED RESULTS

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