ELECTRON-SPIN-RESONANCE OBSERVATION OF DEFECTS IN DEVICE OXIDES DAMAGED BY SOFT X-RAYS

[1] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[2] AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 662 - 664

[3] GALE R, 1983, J APPL PHYS, V54, P6936

[4] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2524 - 2533

[5] IDENTIFICATION OF ELECTRON TRAPS IN THERMAL SILICON DIOXIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 631 - 633

[6] KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) : 735 - 739

[7] RELATIONSHIP BETWEEN X-RAY-PRODUCED HOLES AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1441 - 1444

[8] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[9] LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171

[10] NAGASAWA Y, 1986, UNPUB JPN SOC AP SEP

[1] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[2] AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 662 - 664

[3] GALE R, 1983, J APPL PHYS, V54, P6936

[4] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2524 - 2533

[5] IDENTIFICATION OF ELECTRON TRAPS IN THERMAL SILICON DIOXIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 631 - 633

[6] KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) : 735 - 739

[7] RELATIONSHIP BETWEEN X-RAY-PRODUCED HOLES AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1441 - 1444

[8] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[9] LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171

[10] NAGASAWA Y, 1986, UNPUB JPN SOC AP SEP