PROPOSED MODEL FOR CS-O COVERED SEMICONDUCTOR PHOTOCATHODES

[11] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193

[12] INASP-CS2O, A HIGH-EFFICIENCY INFRARED-PHOTOCATHODE [J]. APPLIED PHYSICS LETTERS, 1970, 16 (06) : 245 - &

[13] LOW-WORK-FUNCTION SURFACES FOR NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 289 - &

[14] FIELD-ELECTRON-MICROSCOPY STUDIES OF CESIUM LAYERS ON VARIOUS REFRACTORY METALS - WORK FUNCTION CHANGE [J]. JOURNAL OF CHEMICAL PHYSICS, 1968, 48 (06) : 2421 - &

[15] TISHIN EA, 1969, FIZ TVERD TELA+, V11, P931

[16] TURNBULL AA, 1968, BRIT J APPL PHYS, V1, P155

[17] IMPROVED PHOTOEMITTERS USING GAAS AND INGAAS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1624 - &

[18] UEBBING JJ, PRIVATE COMMUNICATIO

[19] INGAAS-CSO A LOW WORK FUNCTION (LESS THAN 1.OEV) PHOTOEMITTER [J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 273 - +

[11] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193

[12] INASP-CS2O, A HIGH-EFFICIENCY INFRARED-PHOTOCATHODE [J]. APPLIED PHYSICS LETTERS, 1970, 16 (06) : 245 - &

[13] LOW-WORK-FUNCTION SURFACES FOR NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 289 - &

[14] FIELD-ELECTRON-MICROSCOPY STUDIES OF CESIUM LAYERS ON VARIOUS REFRACTORY METALS - WORK FUNCTION CHANGE [J]. JOURNAL OF CHEMICAL PHYSICS, 1968, 48 (06) : 2421 - &

[15] TISHIN EA, 1969, FIZ TVERD TELA+, V11, P931

[16] TURNBULL AA, 1968, BRIT J APPL PHYS, V1, P155

[17] IMPROVED PHOTOEMITTERS USING GAAS AND INGAAS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1624 - &

[18] UEBBING JJ, PRIVATE COMMUNICATIO

[19] INGAAS-CSO A LOW WORK FUNCTION (LESS THAN 1.OEV) PHOTOEMITTER [J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 273 - +