LOW-TEMPERATURE DEPOSITION OF TIN USING TETRAKIS(DIMETHYLAMIDO)-TITANIUM IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESS

被引:38
作者
WEBER, A [1 ]
NIKULSKI, R [1 ]
KLAGES, CP [1 ]
GROSS, ME [1 ]
BROWN, WL [1 ]
DONS, E [1 ]
CHARATAN, RM [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1149/1.2054820
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
High quality TiN layers were deposited in an electron cyclotron resonance (ECR) plasma process at substrate temperatures between 100 and 60-degrees-C. Tetrakis(dimethylamido)-titanium [Ti(NMe2)4] was used as the precursor and introduced into the downstream region of an ECR plasma. Nitrogen or ammonia have been used as plasma gases. The electrical properties and the film compositions of the gold-colored TiN layers mainly depend on the deposition rate. ECR plasma-activated nitrogen or ammonia reacts with Ti(NMe2)4 to form low resistivity (100-150 muOMEGAcm) crystalline TiN films even at a substrate temperature of 100-degrees-C. Films deposited between 200 and 600-degrees-C exhibited resistivities that decreased from 100 to 45 muOMEGAcm. Crystalline orientation is influenced by the chosen plasma gas. Preferred growth in the (111) and (100) directions were found by using ammonia and nitrogen, respectively The measured resistivities and deposition temperatures are the lowest reported values for a plasma-enhanced TiN deposition process. Experiments with labeled nitrogen show that the nitrogen for the TiN formation is almost exclusively derived from the plasma gas. The deposits were characterized by four-point probe resisivity measurements, x-ray diffraction, forward recoil scattering, and Rutherford backscattering spectrometry. Step-coverage was checked by a scanning electron microscopy cross section of a contact via.
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页码:849 / 853
页数:5
相关论文
共 31 条
[11]   MATRIX INFRARED MEASUREMENT OF TIN [J].
FROBEN, FW ;
ROGGE, F .
CHEMICAL PHYSICS LETTERS, 1981, 78 (02) :264-265
[12]   TIN AS A DIFFUSION BARRIER IN THE TI-PT-AU BEAM-LEAD METAL SYSTEM [J].
GARCEAU, WJ ;
FOURNIER, PR ;
HERB, GK .
THIN SOLID FILMS, 1979, 60 (02) :237-247
[13]   PROPERTIES OF TITANIUM NITRIDE FILMS FOR BARRIER METAL IN ALUMINUM OHMIC CONTACT SYSTEMS [J].
HARA, T ;
YAMANOUE, A ;
IIO, H ;
INOUE, K ;
WASHIDZU, G ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (07) :1447-1451
[14]  
HEDGE RI, 1993, APPL PHYS LETT, V62, P2326
[15]   PROPERTIES OF TITANIUM NITRIDE THIN-FILMS DEPOSITED BY RAPID-THERMAL-LOW-PRESSURE-METALORGANIC-CHEMICAL-VAPOR-DEPOSITION TECHNIQUE USING TETRAKIS (DIMETHYLAMIDO) TITANIUM PRECURSOR [J].
KATZ, A ;
FEINGOLD, A ;
PEARTON, SJ ;
NAKAHARA, S ;
ELLINGTON, M ;
CHAKRABARTI, UK ;
GEVA, M ;
LANE, E .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3666-3677
[16]  
KATZ A, 1992, J APPL PHYS, V71, P333
[17]   CHEMICAL VAPOR-DEPOSITION OF TITANIUM NITRIDE AT LOW-TEMPERATURES [J].
KURTZ, SR ;
GORDON, RG .
THIN SOLID FILMS, 1986, 140 (02) :277-290
[18]  
MCCLUNE WF, JCPDS381420 INT CTR
[19]   INVESTIGATIONS OF THE GROWTH OF TIN THIN-FILMS FROM TI(NME2)4 AND AMMONIA [J].
PRYBYLA, JA ;
CHIANG, CM ;
DUBOIS, LH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (09) :2695-2702
[20]  
RAAIJMAKERS IJ, 1992, 9TH P INT IEEE VLSI