PROPERTIES OF TITANIUM NITRIDE FILMS FOR BARRIER METAL IN ALUMINUM OHMIC CONTACT SYSTEMS

被引：40

作者：

HARA, T ^{[1
]}

YAMANOUE, A ^{[1
]}

IIO, H ^{[1
]}

INOUE, K ^{[1
]}

WASHIDZU, G ^{[1
]}

NAKAMURA, S ^{[1
]}

机构：

[1] M SETEK CO LTD,TAITO KU,TOKYO 110,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 07期

关键词：

TIN; AL OHMIC CONTACT; BARRIER METAL; AL ELECTRODE;

D O I：

10.1143/JJAP.30.1447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Properties of titanium nitride (TiN) films deposited by reactive sputtering and dc magnetron sputtering from composite target are studied. In the as-deposited films, a TiN (200) grain, which is the lowest energy grain and is dominant in bulk TiN, is grown in films from composite target. A resistivity of 44-mu-OMEGA-cm is attained. These results show that high quality TiN films can be deposited by dc magnetron sputtering employed TiN composite target. However, a TiN (111) grain is grown in TiN films by the nitridation of Ti. Nitridation of a reactivley sputtered TiN film in ammonium is also studied. The TiN films deposited from composite target and formed by the nitridation of titanium show good barrier performance in Al-Si/TiN/Si Ohmic contact.

引用

页码：1447 / 1451

页数：5

共 15 条

[1] INVESTIGATION OF TIN FILMS REACTIVELY SPUTTERED USING A SPUTTER GUN [J].