HIGH-PRESSURE DIAMOND AND CUBIC BORON-NITRIDE SYNTHESIS

被引:39
作者
DEMAZEAU, G
机构
[1] Laboratoire de Chimie du Solide, CNRS, Université Bordeaux 1
关键词
HIGH PRESSURE HIGH TEMPERATURE SYNTHESIS; HIGH PRESSURE SYNTHETIC DIAMOND; CUBIC BORON NITRIDE; CRYSTAL GROWTH;
D O I
10.1016/0925-9635(94)05281-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond and cubic boron nitride (c-BN) are most exciting materials for the twenty-first century owing to their exceptional physicochemical properties and the resulting potential applications. Two different routes have been developed for the preparation of such materials: high-pressure high-temperature synthesis (HP-HT), and low-pressure high-temperature synthesis (LP-HT). Film deposition by PVD or CVD is satisfactory for many applications, but HP-HT synthesis may be more appropriate for the growth of single crystals for selective developments. Whereas diamond is only stable thermodynamically under HP-HT conditions, for c-BN the options seem wider. The historical HP-HT synthesis of both materials is presented. In addition, new potential preparation routes for c-BN could be an important advantage of this material in the near future.
引用
收藏
页码:284 / 287
页数:4
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