STRAIGHT STEP-EDGE FORMATION ON AN INAS(001) VICINAL SURFACE BY THE TRANSITION OF SURFACE RECONSTRUCTION

被引：4

作者：

OHKOUCHI, S

IKOMA, N

机构：

[1] Optoelectronics Technology Research Laboratory (OTL), Tsukuba, Ibaraki, 300-26

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 12A期

关键词：

SCANNING TUNNELING MICROSCOPY; INAS; VICINAL SURFACE; STEP STRUCTURE; SURFACE RECONSTRUCTION;

D O I：

10.1143/JJAP.33.L1700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Step structures of InAs (001) vicinal surfaces tilted by 1 degrees towards the [1 $($) over bar$$ 10] direction were investigated using scanning tunneling microscopy. A transition from an As-stabilized (2 x 4) to an In-stabilized (4 x 2) reconstruction caused a change in the step structure of the vicinal surfaces from ragged to straight along the [110] direction with the incorporation of step bunching. The straight shape of the step structure seems to be caused by desorption of arsenic atoms along the [110] direction.

引用

页码：L1700 / L1702

页数：3

共 8 条

[1] A STUDY OF GROUP-V ELEMENT DESORPTION FROM INAS, INP, GAAS AND GAP BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].