A STUDY OF GROUP-V ELEMENT DESORPTION FROM INAS, INP, GAAS AND GAP BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

Desorption behavior of arsenic on InAs and GaAs, and phosphorus on InP and GaP surfaces has been studied by the specular-beam intensity change of reflection high-energy electron diffraction when the group-V-cracker shutter is closed during growth interruption (group-III shutter closed) in gas-source molecular-beam epitaxy. We obtained an activation energy of 55 kcal/mol for arsenic desorption from InAs at high temperatures, and 38 kcal/mol at low temperatures- This difference is explained. Compared with arsenic on InAs, phosphorus on InP has a very large desorption rate constant at high temperatures and only one activation energy of 50 kcal/mol. For GaAs and GaP, the desorption activation energy for arsenic on GaAs is 58 kcal/mol, phosphorus on GaP 43 kcal/mol.