SURFACE-STRUCTURES OF INP AND INAS THERMALLY CLEANED IN AN ARSENIC FLUX

The surface structures of InP and InAs thermally cleaned in an arsenic flux were investigated using an ultrahigh vacuum scanning tunneling microscope multichamber system equipped with a molecular beam epitaxy facility. The InP surfaces thus treated at 510-degrees-C showed In-stabilized (4X2) reconstructions which depended on the time of thermal cleaning. The surface structure of this substrate after thermal cleaning for 3 min comprised one In dimer and three missing dimers. This structure was the same as that of InAs treated under the same conditions. These In-stabilized (4X2) structures formed on both InP and InAs substrates changed to an As-stabilized (2X4) structure when the substrate temperature was lowered to below 480-degrees-C under the same arsenic pressure.