OBSERVATION OF THE INP SURFACE THERMALLY CLEANED IN AN ARSENIC FLUX USING A SCANNING TUNNELING MICROSCOPE

被引：29

作者：

OHKOUCHI, S

TANAKA, I

机构：

[1] Optoelectronics Technology Research Laboratory (OTL), Tsukuba, Ibaraki 300-26

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 13期

关键词：

D O I：

10.1063/1.106294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InP surface thermally cleaned in an arsenic flux was observed using an ultrahigh-vacuum scanning tunneling microscope (UHV-STM). In the STM image, about 1.6 nm period lines of 0.8 nm width with two rows were observed along the [110] direction. This result suggests that the surface comprises two In-In dimers and two missing dimers per (4 X 2) cells.

引用

页码：1588 / 1590

页数：3

共 8 条

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