SI ETCH RATE AND ETCH YIELD WITH AR+/CL-2 SYSTEM

[1] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[2] COBURN JW, 1980, 2ND P S DRY PROC TOK, P103

[3] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554

[4] MEYER UG, 1981, SURF SCI, V103, P177

[5] MEYER UG, 1981, SURF SCI, V103, P524

[6] OKANO H, 1980, EL SOC EXT ABSTR, V111

[7] OKANO H, UNPUB JPN J APPL PHY

[8] CHEMICAL SPUTTERING OF FLUORINATED SILICON [J]. PHYSICAL REVIEW B, 1981, 23 (02): : 823 - 835

[1] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[2] COBURN JW, 1980, 2ND P S DRY PROC TOK, P103

[3] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554

[4] MEYER UG, 1981, SURF SCI, V103, P177

[5] MEYER UG, 1981, SURF SCI, V103, P524

[6] OKANO H, 1980, EL SOC EXT ABSTR, V111

[7] OKANO H, UNPUB JPN J APPL PHY

[8] CHEMICAL SPUTTERING OF FLUORINATED SILICON [J]. PHYSICAL REVIEW B, 1981, 23 (02): : 823 - 835