ANTIPHASE DOMAINS IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SILICON-ON-INSULATOR

被引:52
作者
CHU, SNG
NAKAHARA, S
PEARTON, SJ
BOONE, T
VERNON, SM
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10.1063/1.341561
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O59 [应用物理学];
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页码:2981 / 2989
页数:9
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共 29 条
[1]   GROWTH OF HIGH-QUALITY GAAS-LAYERS ON SI SUBSTRATES BY MOCVD [J].
AKIYAMA, M ;
KAWARADA, Y ;
UEDA, T ;
NISHI, S ;
KAMINISHI, K .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :490-497
[2]  
BIEGELSEN DK, 1986, P 1986 SPRING MRS M, V67, P45
[3]   SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].
CHAND, N ;
PEOPLE, R ;
BAIOCCHI, FA ;
WECHT, KW ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817
[4]  
CHO NH, 1985, APPL PHYS LETT, V47, P880
[5]   GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].
FISCHER, R ;
MASSELINK, WT ;
KLEM, J ;
HENDERSON, T ;
MCGLINN, TC ;
KLEIN, MV ;
MORKOC, H ;
MAZUR, JH ;
WASHBURN, J .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381
[6]  
FISCHER R, 1985, J APPL PHYS, V58, P174
[7]   TEM IMAGE-CONTRAST FROM ANTIPHASE DOMAINS IN GAAS - GE(001) GROWN BY MBE [J].
GOWERS, JP .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04) :231-236
[8]  
HULL R, 1987, APPL PHYS LETT, V50, P853
[9]  
HULL R, IN PRESS MRS S P
[10]   LEED STUDY OF THE STEPPED SURFACE OF VICINAL SI(100) [J].
KAPLAN, R .
SURFACE SCIENCE, 1980, 93 (01) :145-158