HYDROGENATED AMORPHOUS-GERMANIUM SCHOTTKY-BARRIER DIODES

被引：3

作者：

FAJARDO, F

CHAMBOULEYRON, I

机构：

[1] Inst. de Fisica, Univ. Estadual de Campinas

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1993年 / 5卷

关键词：

D O I：

10.1088/0953-8984/5/33A/128

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The current-voltage characteristics of Pd/a-Ge:H Schottky barriers are presented. The devices have been deposited by the RF sputtering method. The I-V curve follows an exponential law and the diode ideality factor is eta = 2 indicating the existence of recombination currents in the space charge region.

引用

页码：A347 / A348

页数：2

共 5 条

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[J]. PHYSICAL REVIEW B, 1992, 46 (04): : 2119 - 2125

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