NEUTRALIZATION OF ACCEPTOR AND DONOR IMPURITIES IN HYDROGENATED CDTE

被引：16

作者：

SVOB, L

HEURTEL, A

MARFAING, Y

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90809-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：815 / 818

页数：4

共 16 条

[1] PASSIVATION OF HIGH-RESISTIVITY CADMIUM TELLURIDE BY HYDROGEN IMPLANTATION [J].

BIGLARI, B ;

SAMIMI, M ;

HAGEALI, M ;

SIFFERT, P .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (01) :47-52

[2] PROPERTIES OF NITROGEN ACCEPTOR IN CDTE - ENERGY-SPECTRUM AND INTERACTION WITH HYDROGEN [J].

BOUDOUKHA, A ;

LEGROS, R ;

SVOB, L ;

MARFAING, Y .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :226-231

[3]

Capizzi M., 1987, 18th International Conference on the Physics of Semiconductors, P995

[4] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J].

CHEVALLIER, J ;

DAUTREMONTSMITH, WC ;

TU, CW ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :108-110

[5]

CHEVALLIER J, 1986, DEFECTS SEMICONDUCTO, P591

[6]

IDO T, IN PRESS J PHYS CHEM

[7] INFRARED SPECTROSCOPIC EVIDENCE OF SILICON RELATED HYDROGEN COMPLEXES IN HYDROGENATED N-TYPE GAAS DOPED WITH SILICON [J].

JALIL, A ;

CHEVALLIER, J ;

PESANT, JC ;

MOSTEFAOUI, R ;

PAJOT, B ;

MURAWALA, P ;

AZOULAY, R .

APPLIED PHYSICS LETTERS, 1987, 50 (08) :439-441

[8] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM .

PHYSICAL REVIEW B, 1985, 31 (08) :5525-5528

[9] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS [J].

JOHNSON, NM ;

BURNHAM, RD ;

STREET, RA ;

THORNTON, RL .

PHYSICAL REVIEW B, 1986, 33 (02) :1102-1105

[10]

PAJOT B, IN PRESS SEMICOND SC

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