GALVANOMAGNETIC PROPERTIES OF EPITAXIAL MNAL FILMS ON GAAS

被引：53

作者：

LEADBEATER, ML

ALLEN, SJ

DEROSA, F

HARBISON, JP

SANDS, T

RAMESH, R

FLOREZ, LT

KERAMIDAS, VG

机构：

[1] Bellcore, Red Bank, NJ 07701

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 08期

关键词：

D O I：

10.1063/1.348298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystal films of tau-MnAl are grown by molecular-beam epitaxy on GaAs substrates. The extraordinary Hall effect shows a large hysteresis loop, and the magnetization is found to have a substantial component perpendicular to the plane of the film.

引用

收藏

页码：4689 / 4691

页数：3

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