HIGH CONTRAST, SUBMILLIWATT POWER INGAAS/GAAS STRAINED-LAYER MULTIPLE-QUANTUM-WELL ASYMMETRIC REFLECTION MODULATOR

被引：14

作者：

JIN, R ^{[1
]}

KHITROVA, G ^{[1
]}

GIBBS, HM ^{[1
]}

LOWRY, C ^{[1
]}

PEYGHAMBARIAN, N ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT ORAL PATHOL,TORONTO M5S 1A1,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 25期

关键词：

D O I：

10.1063/1.105736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high contrast, low power optical reflection modulator with an InGaAs/GaAs strained-layer multiple quantum well (MQW) nonlinear spacer is demonstrated. Taking advantage of large absorptive and dispersive nonlinearities near the exciton peak, on/off contrast ratios exceeding 29 dB are achieved with submilliwatt pump powers at room temperature.

引用

页码：3216 / 3218

页数：3

共 14 条

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