PBSRS-MQW LASERS AND THE EFFECT OF QUANTUM-WELL ON OPERATION TEMPERATURE

被引：25

作者：

ISHIDA, A ^{[1
]}

SAKURAI, N ^{[1
]}

AIKAWA, K ^{[1
]}

FUJIYASU, H ^{[1
]}

机构：

[1] SHIZUOKA UNIV,GRAD SCH ELECTR SCI & TECHNOL,HAMAMATSU,SHIZUOKA 432,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90374-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser operation conditions of the PbSrS double heterostructure (DH) and multiple quantum well (MQW) lasers are discussed in terms of the free carrier absorption. It is shown that the MQW structure is useful reducing the threshold current and increasing the operation temperature of the IV-VI narrow gap semiconductor lasers. PbSrS/PbS MQW laser was prepared by hot wall epitaxy, and the operation properties were compared with those of the PbSrS/PbS and PbSrS/PbSrS DH lasers. The MQW laser showed relatively low threshold currents and the laser operated up to 255 K (2.80 mum) in pulsed operation, which is the highest ever reported for PbS based lasers.

引用

页码：1141 / 1144

页数：4

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