FOCUS - THE CRITICAL PARAMETER FOR SUBMICRON LITHOGRAPHY

[1] ARNOLD WH, IN PRESS SPIE J

[2] BLAIS PD, 1977, SOLID STATE TECHNOL, V20, P76

[3] BOSSUNG JW, 1977, SPIE, V100, P80

[4] BROERS AN, 1985, SOLID STATE TECHNOL, V28, P119

[5] GREENEICH JS, 1967, J APPL PHYS, V45, P2736

[6] GRIFFING BF, 1984, SPIE J, V469, P94

[7] KING MC, 1981, VLSI ELECTRONICS MIC, V1

[8] GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 717 - 722

[9] RUBIN D, 1985, P SEMICON W

[10] ANALYTICAL MODEL OF POSITIVE RESIST DEVELOPMENT APPLIED TO LINEWIDTH CONTROL IN OPTICAL LITHOGRAPHY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 434 - 440

[1] ARNOLD WH, IN PRESS SPIE J

[2] BLAIS PD, 1977, SOLID STATE TECHNOL, V20, P76

[3] BOSSUNG JW, 1977, SPIE, V100, P80

[4] BROERS AN, 1985, SOLID STATE TECHNOL, V28, P119

[5] GREENEICH JS, 1967, J APPL PHYS, V45, P2736

[6] GRIFFING BF, 1984, SPIE J, V469, P94

[7] KING MC, 1981, VLSI ELECTRONICS MIC, V1

[8] GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 717 - 722

[9] RUBIN D, 1985, P SEMICON W

[10] ANALYTICAL MODEL OF POSITIVE RESIST DEVELOPMENT APPLIED TO LINEWIDTH CONTROL IN OPTICAL LITHOGRAPHY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 434 - 440