ANALYTICAL MODEL OF POSITIVE RESIST DEVELOPMENT APPLIED TO LINEWIDTH CONTROL IN OPTICAL LITHOGRAPHY

被引：18

作者：

WATTS, MPC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583282

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：434 / 440

页数：7

共 11 条

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[4] TIME EVOLUTION OF DEVELOPED CONTOURS IN POLY-(METHYL METHACRYLATE) ELECTRON RESIST [J].

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[5]

KING MC, 1980, P KODAK MICROELECTRO, P33

[6] GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY [J].

OLDHAM, WG ;

NANDGAONKAR, SN ;

NEUREUTHER, AR ;

OTOOLE, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :717-722

[7] CHARACTERIZATION OF POSITIVE RESIST DEVELOPMENT [J].

OTOOLE, MM ;

GRANDE, WJ .

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[8]

OTOOLE MM, 1982, HEWLETT-PACKARD J, V33, P5

[9]

SHAW JM, 1975, P KODAK MICROELECTRO

[10]

WATTS MPC, 1983, TUTORIAL LECTURES EL, V79, P158

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