TIME EVOLUTION OF DEVELOPED CONTOURS IN POLY-(METHYL METHACRYLATE) ELECTRON RESIST

被引：50

作者：

GREENEICH, JS ^{[1
]}

机构：

[1] GM CORP,TECH CTR,RES LABS,ELECTR DEPT,WARREN,MI 48090

来源：

关键词：

D O I：

10.1063/1.1663227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5264 / 5268

页数：5

共 18 条

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[2] MODEL FOR EXPOSURE OF ELECTRON-SENSITIVE RESISTS [J].

GREENEICH, JS ;

VANDUZER, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06) :1056-1059

[3]

GREENEICH JS, 1973, THESIS U CALIFORNIA

[4]

GREENEICH JS, 1974, GMR1640 GEN MOT RES

[5]

GREENEICH JS, 1974, GMR1547 GEN MOT RES

[6]

GREENEICH JS, 1974, IEEE T ELECTRON DEVI, VED21, P286

[7]

GREENEICH JS, TO BE PUBLISHED

[8] ELECTRON RESISTS FOR MICROCIRCUIT AND MASK PRODUCTION [J].

HATZAKIS, M .

[9]

HATZAKIS M, 1971, APPL PHYS LETT, V18

[10]

HAWRYLUK RJ, 1972, 5TH P INT C EL ION B, P51