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CHARACTERIZATION OF POSITIVE RESIST DEVELOPMENT
被引:15
作者
:
OTOOLE, MM
论文数:
0
引用数:
0
h-index:
0
OTOOLE, MM
GRANDE, WJ
论文数:
0
引用数:
0
h-index:
0
GRANDE, WJ
机构
:
来源
:
ELECTRON DEVICE LETTERS
|
1981年
/ 2卷
/ 12期
关键词
:
D O I
:
10.1109/EDL.1981.25446
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:311 / 313
页数:3
相关论文
共 8 条
[1]
THERMAL EFFECTS ON PHOTORESIST AZ1350J
[J].
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DILL, FH
;
SHAW, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SHAW, JM
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1977,
21
(03)
:210
-218
[2]
CHARACTERIZATION OF POSITIVE PHOTORESIST
[J].
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
DILL, FH
;
HORNBERGER, WP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
HORNBERGER, WP
;
HAUGE, PS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
HAUGE, PS
;
SHAW, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
SHAW, JM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(07)
:445
-452
[3]
HOFER DC, 1981, JUN EL MAT C SANT BA
[4]
IOTA, A NEW COMPUTER CONTROLLED THIN-FILM THICKNESS MEASUREMENT TOOL
[J].
KONNERTH, KL
论文数:
0
引用数:
0
h-index:
0
KONNERTH, KL
.
SOLID-STATE ELECTRONICS,
1972,
15
(04)
:371
-&
[5]
INSITU MEASUREMENT OF DIELECTRIC THICKNESS DURING ETCHING OR DEVELOPING PROCESSES
[J].
KONNERTH, KL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
KONNERTH, KL
;
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
DILL, FH
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(07)
:452
-456
[6]
PHOTOSOLUBILITY OF DIAZOQUINONE RESISTS
[J].
MEYERHOFER, D
论文数:
0
引用数:
0
h-index:
0
MEYERHOFER, D
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(05)
:921
-926
[7]
GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY
[J].
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OLDHAM, WG
;
NANDGAONKAR, SN
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NANDGAONKAR, SN
;
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NEUREUTHER, AR
;
OTOOLE, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OTOOLE, M
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
:717
-722
[8]
INSITU CHARACTERIZATION OF POSITIVE RESIST DEVELOPMENT
[J].
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA
UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA
OLDHAM, WG
.
OPTICAL ENGINEERING,
1979,
18
(01)
:59
-62
←
1
→
共 8 条
[1]
THERMAL EFFECTS ON PHOTORESIST AZ1350J
[J].
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DILL, FH
;
SHAW, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SHAW, JM
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1977,
21
(03)
:210
-218
[2]
CHARACTERIZATION OF POSITIVE PHOTORESIST
[J].
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
DILL, FH
;
HORNBERGER, WP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
HORNBERGER, WP
;
HAUGE, PS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
HAUGE, PS
;
SHAW, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
SHAW, JM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(07)
:445
-452
[3]
HOFER DC, 1981, JUN EL MAT C SANT BA
[4]
IOTA, A NEW COMPUTER CONTROLLED THIN-FILM THICKNESS MEASUREMENT TOOL
[J].
KONNERTH, KL
论文数:
0
引用数:
0
h-index:
0
KONNERTH, KL
.
SOLID-STATE ELECTRONICS,
1972,
15
(04)
:371
-&
[5]
INSITU MEASUREMENT OF DIELECTRIC THICKNESS DURING ETCHING OR DEVELOPING PROCESSES
[J].
KONNERTH, KL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
KONNERTH, KL
;
DILL, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
DILL, FH
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(07)
:452
-456
[6]
PHOTOSOLUBILITY OF DIAZOQUINONE RESISTS
[J].
MEYERHOFER, D
论文数:
0
引用数:
0
h-index:
0
MEYERHOFER, D
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(05)
:921
-926
[7]
GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY
[J].
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OLDHAM, WG
;
NANDGAONKAR, SN
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NANDGAONKAR, SN
;
NEUREUTHER, AR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
NEUREUTHER, AR
;
OTOOLE, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
OTOOLE, M
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
:717
-722
[8]
INSITU CHARACTERIZATION OF POSITIVE RESIST DEVELOPMENT
[J].
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA
UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA
OLDHAM, WG
.
OPTICAL ENGINEERING,
1979,
18
(01)
:59
-62
←
1
→