TYPE CONVERSION OF INSB FROM P TO N BY ION-BOMBARDMENT AND LASER IRRADIATION

被引：35

作者：

FUJISAWA, I

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 11期

关键词：

D O I：

10.1143/JJAP.19.2137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2137 / 2141

页数：5

共 10 条

[1]

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[2]

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[3]

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[4] N-P JUNCTION PHOTODETECTORS IN INSB FABRICATED BY PROTON BOMBARDMENT [J].

FOYT, AG ;

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DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :335-&

[5]

GUSEVA MI, 1976, SOV PHYS SEMICOND+, V10, P872

[6] PLANAR INSB PHOTODIODES FABRICATED BY BE AND MG ION-IMPLANTATION [J].

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SOLID-STATE ELECTRONICS, 1975, 18 (09) :753-756

[7]

KORSHUNOV AB, 1978, SOV PHYS SEMICOND+, V12, P554

[8] FORMATION AND PROPERTIES OF ANODIC OXIDE FILMS ON INDIUM ANTIMONIDE [J].

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SUZUKI, T ;

NOGUCHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (12) :1491-&

[9] PLANAR P-N-JUNCTIONS IN INSB BY BE ION-IMPLANTATION [J].

THOM, RD ;

KONKEL, WH ;

HOENDERVOOGT, RM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) :1193-1194

[10]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

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