UNIFORM RESISTIVITY P-TYPE SILICON BY ZONE LEVELING

[1] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1416 - 1419

[2] CONTRIBUTION TO THE FLOATING ZONE REFINING OF SILICON [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (06) : 453 - 460

[3] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) : 1987 - 1991

[4] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[5] EMEIS R, 1954, Z NATURFORSCH A, V9, P67

[6] FLOATING ZONE RECRYSTALLIZATION OF SILICON [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1954, 25 (04) : 331 - 334

[7] PFANN WG, 1957, METALL REV, V2, P65

[8] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1204 - 1206

[9] Theurer H.C., 1956, J MET, V8, P1316

[10] MEASUREMENT OF MINORITY CARRIER LIFETIME IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 489 - 496

[1] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1416 - 1419

[2] CONTRIBUTION TO THE FLOATING ZONE REFINING OF SILICON [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (06) : 453 - 460

[3] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) : 1987 - 1991

[4] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[5] EMEIS R, 1954, Z NATURFORSCH A, V9, P67

[6] FLOATING ZONE RECRYSTALLIZATION OF SILICON [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1954, 25 (04) : 331 - 334

[7] PFANN WG, 1957, METALL REV, V2, P65

[8] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1204 - 1206

[9] Theurer H.C., 1956, J MET, V8, P1316

[10] MEASUREMENT OF MINORITY CARRIER LIFETIME IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 489 - 496