A GAAS1-XPX NEGATIVE-RESISTANCE LIGHT-EMITTING DIODE

被引：9

作者：

GERHARD, GC

JENSEN, HA

机构：

来源：

APPLIED PHYSICS LETTERS | 1967年 / 10卷 / 12期

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D O I：

10.1063/1.1728200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：333 / &

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[5] GAAS P-SI-N NEGATIVE RESISTANCE INFRARED EMITTING DIODE AT LIQUID N2 + ROOM TEMPERATURES ( ROOM TEMP QUANTUM EFF - 0.1 PER CENT AT 400 MA INCREASES AT LIQUID N2 TEMP SEMI-INSULATOR RESISTIVITY -107 OMEGA-CM E )
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