GAAS P-SI-N NEGATIVE RESISTANCE INFRARED EMITTING DIODE AT LIQUID N2 + ROOM TEMPERATURES ( ROOM TEMP QUANTUM EFF - 0.1 PER CENT AT 400 MA INCREASES AT LIQUID N2 TEMP SEMI-INSULATOR RESISTIVITY -107 OMEGA-CM E )

被引：11

作者：

ING, SW

JENSEN, HA

STERN, B

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来源：

APPLIED PHYSICS LETTERS | 1964年 / 4卷 / 09期

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D O I：

10.1063/1.1754014

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：162 / &

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