THEORY OF TRANSIENT ENERGY-TRANSFER IN GALLIUM-ARSENIDE

被引：82

作者：

VALLEY, GC

SMIRL, AL

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 02期

关键词：

D O I：

10.1109/3.126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：304 / 310

页数：7

相关论文

共 27 条

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[2] OPTICAL LIMITING IN GAAS
BOGGESS, TF
SMIRL, AL
MOSS, SC
BOYD, IW
VANSTRYLAND, EW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) : 488 - 494
[3] SEARCH FOR RESONANCE BEHAVIOR IN MICROWAVE DIELECTRIC CONSTANT OF GAAS
CHAMPLIN, KS
ERLANDSON, RJ
GLOVER, GH
HAUGE, PS
LU, T
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (11) : 348 - +
[4] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS
CHANTRE, A
VINCENT, G
DUBOIS
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5335 - 5359
[5] EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MAPPING OF MIDGAP FLAW CONCENTRATION IN SEMI-INSULATING GAAS WAFERS BY MEASUREMENT OF NEAR-INFRARED TRANSMITTANCE
DOBRILLA, P
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 208 - 218
[6] 4-WAVE MIXING IN SEMI-INSULATING INP AND GAAS USING THE PHOTOREFRACTIVE EFFECT
GLASS, AM
JOHNSON, AM
OLSON, DH
SIMPSON, W
BALLMAN, AA
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 948 - 950
[7] HOLOGRAPHY, COHERENT-LIGHT AMPLIFICATION AND OPTICAL-PHASE CONJUGATION WITH PHOTOREFRACTIVE MATERIALS
GUNTER, P
[J]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1982, 93 (04): : 199 - 299
[8] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS
KAMINSKA, M
SKOWRONSKI, M
LAGOWSKI, J
PARSEY, JM
GATOS, HC
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304
[9] BEAM COUPLING IN UNDOPED GAAS AT 1.06-MU-M USING THE PHOTOREFRACTIVE EFFECT
KLEIN, MB
[J]. OPTICS LETTERS, 1984, 9 (08) : 350 - 352
[10] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY
LANG, DV
LOGAN, RA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066