INFRARED MEASUREMENTS OF INTERSTITIAL OXYGEN IN HEAVILY DOPED SILICON

被引：14

作者：

OATES, AS

LIN, W

机构：

[1] AT&T Bell Lab, Allentown, PA,, USA, AT&T Bell Lab, Allentown, PA, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 89卷 / 01期

关键词：

INFRARED IMAGING - MASS SPECTROMETERS - OXYGEN;

D O I：

10.1016/0022-0248(88)90080-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A technique, based on the original approach of Series and Griffiths, has been developed for infrared (IR) measurements of interstitial oxygen concentrations in heavily doped silicon. The new procedure uses a short baseline and thin wafer samples. Our results show that this method can be used at resistivities down to 0. 015 OMEGA cm for n-type silicon and near to 0. 05 OMEGA cm for p-type. Measurements of the oxygen content of the same samples by secondary ion mass spectroscopy are in good agreement with the IR data.

引用

页码：117 / 123

页数：7

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