OXYGEN-CONTENT OF HEAVILY DOPED SILICON

被引：12

作者：

PEARCE, CW

JACCODINE, RJ

FILO, AJ

LIN, W

机构：

[1] AT&T BELL LABS, ALLENTOWN, PA 18103 USA

[2] LEHIGH UNIV, BETHLEHEM, PA 18015 USA

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.95876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：887 / 889

页数：3

共 21 条

[1]

BAGHDADI A, 1983, P S DEFECTS SILICON, P293

[2]

BENSON KE, 1981, SEMICONDUCTOR SILICO, P33

[3] THE EFFECT OF DOPING ON THE FORMATION OF SWIRL DEFECTS IN DISLOCATION-FREE CZOCHRALSKI-GROWN SILICON-CRYSTALS [J].

DEKOCK, AJR ;

VANDEWIJGERT, WM .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :718-734

[4] EFFECT OF DOPING ON MICRODEFECT FORMATION IN AS-GROWN DISLOCATION-FREE CZOCHRALSKI SILICON-CRYSTALS [J].

DEKOCK, AJR ;

STACY, WT ;

VANDEWIJGERT, WM .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :611-613

[5]

DYSON W, 1983, P S DEFECTS SILICON, P246

[6] THE EFFECTS OF IMPURITY DIFFUSION AND SURFACE DAMAGE ON OXYGEN PRECIPITATION IN SILICON [J].

FAIR, RB .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :388-391

[7] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J].

GRAFF, K ;

GRALLATH, E ;

ADES, S ;

GOLDBACH, G ;

TOLG, G .

SOLID-STATE ELECTRONICS, 1973, 16 (08) :887-893

[8]

JACCODINE RJ, 1983, P S DEFECTS SILICON, P115

[9] METHOD TO MEASURE THE PRECIPITATED AND TOTAL OXYGEN CONCENTRATION IN SILICON [J].

JASTRZEBSKI, L ;

ZANZUCCHI, P ;

THEBAULT, D ;

LAGOWSKI, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1638-1641

[10]

LIN W, 1983, SILICON PROCESSING, P29

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