DEEP-LEVEL TRANSIENT SPECTROSCOPY OF ALXGA1-XAS/GAAS USING NONDESTRUCTIVE ACOUSTOELECTRIC VOLTAGE MEASUREMENT

被引：21

作者：

TABIBAZAR, M

HAJJAR, F

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/16.24367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1189 / 1195

页数：7

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[11] CHARACTERIZATION OF ELECTRICAL-PROPERTIES OF SEMI-INSULATING GAAS USING ACOUSTOELECTRIC VOLTAGE SPECTROSCOPY BETWEEN 83-K AND 300-K WITH SURFACE-WAVE POWER AS AN ADDITIONAL PARAMETER
TABIBAZAR, M
[J]. SOLID-STATE ELECTRONICS, 1988, 31 (07) : 1197 - 1204
[12] TRANSIENT TYPE-INVERSION OF SEMIINSULATING GAAS UNDER STRONG ILLUMINATION AT 140-K DETECTED BY THE NONDESTRUCTIVE SURFACE-ACOUSTIC-WAVE TECHNIQUE
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[J]. SOLID-STATE ELECTRONICS, 1987, 30 (07) : 705 - 711
[13] ACOUSTOELECTRIC MEASUREMENTS OF MINORITY AND MAJORITY CARRIER MOBILITIES IN SEMICONDUCTORS INCLUDING HG1-XCDXTE
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DAS, P
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (02): : 119 - 124
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